HD100N02(AHI) 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: HL(Haolin Elec) HD100N02(AHI)
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 87W
- Total Gate Charge (Qg@Vgs): 32nC@4.5V
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 2800pF@15V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 0.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 265pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@4.5V,20A
- Package: TO-252
- Manufacturer: HL(Haolin Elec)
